IRFR5305TRPBF | Infineon Technologies
Infineon Technologies P-channel HEXFET power MOSFET, DPAK, IRFR5305TRPBF
Order No.: 54S1046
MPN:
IRFR5305TRPBF
SP001557082
Unit Price (€ / pc.)
0.5117 € *
Standard delivery time from the manufacturer is: 12 Weeks
Power MOSFET, IRFR5305TRPBF, INFINEON
Fifth generation HEXFET from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Features
- Industry-leading quality
- Dynamic dv/dt Rating
- 100% avalanche tested
- 175 °C Operating Temperature
- Green product (RoHS compliant)
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Version | P-channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 65 mΩ | |
| Enclosure | DPAK | |
| Gate Charge Qg @10V (nC) | 2.9x10<sup>-8</sup> C | |
| Assembly | SMD | |
| min. operating temperature | -55 °C | |
| max. operating temperature | 175 °C |
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Logistics
| Property | Value |
|---|---|
| Original Packaging | Reel with 2,000 pieces |
| Country of origin | CN |
Compliance
| Property | Value |
|---|---|
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
| RoHS conform | Yes |