IRFR3806TRPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, DPAK, IRFR3806TRPBF
Order No.: 54S1072
MPN:
IRFR3806TRPBF
SP001564890
Unit Price (€ / pc.)
0.6902 € *
Standard delivery time from the manufacturer is: 14 Weeks
Power MOSFET, IRFR3806TRPBF, INFINEON
The StrongIRFET power MOSFET is optimized for low RDS(On) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Features
- Industry standard surface - mount power package
- Silicon optimized for applications switching below < 100 kHz
- Softer body-diode compared to previous silicon generation
- Standard pinout allows for drop in replacement
- Increased power density
Applications
- Battery protection
- SMPS
- DC switch
- Load switch
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Assembly | SMD | |
| drain-source on resistance RDS (on) max @VGS=10V | 15.8 mΩ | |
| max. operating temperature | 175 °C | |
| min. operating temperature | -55 °C | |
| Enclosure | DPAK | |
| Version | N channel | |
| Gate Charge Qg @10V (nC) | 3x10<sup>-8</sup> C |
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Logistics
| Property | Value |
|---|---|
| Country of origin | CN |
| Original Packaging | Reel with 2,000 pieces |
Compliance
| Property | Value |
|---|---|
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |