IRFR1205TRPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, DPAK, IRFR1205TRPBF
Order No.: 54S1061
MPN:
IRFR1205TRPBF
SP001560566
Unit Price (€ / pc.)
0.4522 € *
Available in 5 Days: 7,200 pcs. - if ordered today
Power MOSFET, IRFR1205TRPBF, INFINEON
Fifth Generation HEXFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Features
- Planar cell structure for wide SOA
- Optimized for broadest availability from distribution partners
- Silicon optimized for applications switching below < 100 kHz
- Industry standard surface mount package
- Standard pinout allows for drop-in replacement
Technical specifications
| min. operating temperature | -55 °C | |
| drain-source on resistance RDS (on) max @VGS=10V | 27 mΩ | |
| max. operating temperature | 175 °C | |
| Enclosure | DPAK | |
| Gate Charge Qg @10V (nC) | 4.33x10<sup>-8</sup> C | |
| Version | N channel | |
| Assembly | SMD |
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Logistics
| Original Packaging | Reel with 2,000 pieces |
| Country of origin | CN |
Compliance
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
| RoHS conform | Yes |