IRFR1205TRPBF | Infineon Technologies

Infineon Technologies N channel HEXFET power MOSFET, DPAK, IRFR1205TRPBF

Order No.: 54S1061
MPN:
IRFR1205TRPBF
SP001560566
IRFR1205TRPBF Infineon Technologies MOSFETs
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Unit Price (€ / pc.)
0.4522 € *
Available in 5 Days: 7,300 pcs. - if ordered today
Total Price:
22.61 € *
*incl. VAT plus shipping costs
Subject to prior sale
50 pcs.
0.4522 €

Power MOSFET, IRFR1205TRPBF, INFINEON

Fifth Generation HEXFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Silicon optimized for applications switching below < 100 kHz
  • Industry standard surface mount package
  • Standard pinout allows for drop-in replacement
Technical specifications
min. operating temperature -55 °C
drain-source on resistance RDS (on) max @VGS=10V 27 mΩ
max. operating temperature 175 °C
Enclosure DPAK
Gate Charge Qg @10V (nC) 4.33x10<sup>-8</sup> C
Version N channel
Assembly SMD
Logistics
Original Packaging Reel with 2,000 pieces
Country of origin CN
Compliance
Date of RoHS guidelines 3/31/15
SVHC free Yes
RoHS conform Yes