IRFP250NPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 200 V, 30 A, TO-247, IRFP250NPBF
Unit Price (€ / pc.)
0.9282 € *
Available: 4,712 pcs.
MOSFET, IRFP250NPBF, Infineon Technologies
The IRFP250NPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- Advanced process technology
- Ease of paralleling
- Dynamic dv/dt rating
- Fast switching
- Simple drive requirements
Applications
- DC motors
- Inverters
- SMPS
- Lighting
- Load switches
- Battery powered applications
Technical specifications
| Filter | Property | Value |
|---|---|---|
| max. Voltage | 200 V | |
| Assembly | THT | |
| Power loss | 214 W | |
| drain-source on resistance RDS (on) max @VGS=10V | 75 mΩ | |
| max. operating temperature | 175 °C | |
| Version | N channel | |
| Gate Charge Qg @10V (nC) | 1.23x10<sup>-7</sup> C | |
| Enclosure | TO-247 | |
| min. operating temperature | -55 °C | |
| Max. current | 30 A |
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Logistics
| Property | Value |
|---|---|
| Country of origin | MX |
| Original Packaging | Bar with 25 pieces |
| Customs tariff number | 85412900 |
Compliance
| Property | Value |
|---|---|
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |