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IRFP250NPBF | Infineon Technologies

Infineon Technologies N channel HEXFET power MOSFET, 200 V, 30 A, TO-247, IRFP250NPBF

Order No.: 24S3301
EAN: 4099879033390
MPN:
IRFP250NPBF
Series: IRFP
Infineon Technologies
IRFP250NPBF Infineon Technologies MOSFETs
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Key Specification:
Version N channel
max. Voltage 200 V
Max. current 30 A
drain-source on resistance RDS (on) max @VGS=10V 75 mΩ
Download Datasheet Technical specifications
Unit Price (€ / pc.)
1.0115 € *
Available: 4,712 pcs.
Total Price:
1.01 € *
*incl. VAT plus shipping costs
Subject to prior sale
1 pcs.
1.0115 €
Description
Technical specifications
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Logistics
Compliance

MOSFET, IRFP250NPBF, Infineon Technologies

The IRFP250NPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced process technology
  • Ease of paralleling
  • Dynamic dv/dt rating
  • Fast switching
  • Simple drive requirements

Applications

  • DC motors
  • Inverters
  • SMPS
  • Lighting
  • Load switches
  • Battery powered applications
Technical specifications
Power loss 214 W
drain-source on resistance RDS (on) max @VGS=10V 75 mΩ
max. operating temperature 175 °C
max. Voltage 200 V
Max. current 30 A
Gate Charge Qg @10V (nC) 0.000000123 C
min. operating temperature -55 °C
Assembly THT
Enclosure TO-247
Version N channel
Articles of same specification 0
Logistics
Country of origin MX
Original Packaging Bar with 25 pieces
Customs tariff number 85412900
Compliance
Date of RoHS guidelines 3/31/15
SVHC free Yes
RoHS conform Yes