IRFH8318TRPBF | Infineon Technologies

Name: Infineon Technologies N channel HEXFET power MOSFET, 30 V, 27 A, PQFN, IRFH8318TRPBF
Brand: Infineon Technologies
SKU: 31S3256
Availability: InStock

Infineon Technologies N channel HEXFET power MOSFET, 30 V, 27 A, PQFN, IRFH8318TRPBF

Order No.: 31S3256

EAN: 4099879034175

MPN:

IRFH8318TRPBF

SP001572710

Series: IRFH

IRFH8318TRPBF Infineon Technologies MOSFETs

Image may differ

Key Specification:

Version N channel

max. Voltage 30 V

Max. current 27 A

drain-source on resistance RDS (on) max @VGS=4,5V 4.6 mΩ

drain-source on resistance RDS (on) max @VGS=10V 3.1 mΩ

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.3927 € *

Standard delivery time from the manufacturer is: 13 Weeks

Total Price:

1,570.80 € *

*incl. VAT plus shipping costs

Subject to prior sale

Description

Power MOSFET, IRFH8318TRPBF, Infineon Technologies

Synchronous MOSFET for high frequency buck converters

Features

Low Thermal Resistance to PCB (< 1.7°C/
Low Profile (<1.2mm)
Industry-Standard Pinou

Technical specifications

Filter	Property	Value
	Gate Charge Qg @10V (nC)	4.1x10<sup>-8</sup> C
	max. operating temperature	150 °C
	min. operating temperature	-55 °C
	Assembly	SMD
	max. Voltage	30 V
	drain-source on resistance RDS (on) max @VGS=4,5V	4.6 mΩ
	Max. current	27 A
	Power loss	3.6 W
	Version	N channel
	Enclosure	PQFN
	drain-source on resistance RDS (on) max @VGS=10V	3.1 mΩ