IRFB4227PBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 200 V, 65 A, TO-220, IRFB4227PBF
Unit Price (€ / pc.)
2.7251 € *
Available: 0 pcs.
Available in 5 Days: 430 pcs.
Leadtime: 1 Week **
Total Price:
2.73 € *
Price list
Quantity
Price per unit*
1 pcs.
2.7251 €
100 pcs.
2.4157 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IRFB4227PBF, Infineon Technologies
The IRFB4227PBF is a power MOSFET rectifier that utilizes processing techniques to achieve low on-resistance per silicon area and low E rating.
Features
- Advanced process technology
- Key parameters optimized for PDP sustain, energy recovery and pass switch applications
- Low E rating to reduce power dissipation
- Low Q for fast response
- High repetitive peak current capability for reliable operation
- Short fall and rise times for fast switching
- Repetitive avalanche capability for robustness and reliability
Applications
- DC motors
- Battery management systems
- Inverters
- DC-DC converters
Technical specifications
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 24 mΩ | |
| Gate Charge Qg @10V (nC) | 7x10<sup>-8</sup> C | |
| Enclosure | TO-220 | |
| max. Voltage | 200 V | |
| Max. current | 65 A | |
| max. operating temperature | 175 °C | |
| min. operating temperature | -40 °C | |
| Assembly | THT | |
| Power loss | 330 W |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
