IRFB4227PBF | Infineon Technologies

Infineon Technologies N channel HEXFET power MOSFET, 200 V, 65 A, TO-220, IRFB4227PBF

Order No.: 31S3229
EAN: 4099879034120
MPN:
IRFB4227PBF
Series: IRFB
IRFB4227PBF Infineon Technologies MOSFETs
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Unit Price (€ / pc.)
0.9639 € *
Available in 5 Days: 1,070 pcs. - if ordered today
Total Price:
9.64 € *
*incl. VAT plus shipping costs
Subject to prior sale
10 pcs.
0.9639 €

MOSFET, IRFB4227PBF, Infineon Technologies

The IRFB4227PBF is a power MOSFET rectifier that utilizes processing techniques to achieve low on-resistance per silicon area and low E rating.

Features

  • Advanced process technology
  • Key parameters optimized for PDP sustain, energy recovery and pass switch applications
  • Low E rating to reduce power dissipation
  • Low Q for fast response
  • High repetitive peak current capability for reliable operation
  • Short fall and rise times for fast switching
  • Repetitive avalanche capability for robustness and reliability

Applications

  • DC motors
  • Battery management systems
  • Inverters
  • DC-DC converters
Technical specifications
max. Voltage 200 V
max. operating temperature 175 °C
min. operating temperature -40 °C
drain-source on resistance RDS (on) max @VGS=10V 24 mΩ
Enclosure TO-220
Max. current 65 A
Power loss 330 W
Assembly THT
Version N channel
Gate Charge Qg @10V (nC) 7x10<sup>-8</sup> C
Logistics
Customs tariff number 85412900
Country of origin CN
Compliance
RoHS conform Yes
SVHC free Yes
Date of RoHS guidelines 3/31/15