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IRFB4020PBF | Infineon Technologies

Infineon Technologies N channel digital audio MOSFET, 200 V, 18 A, TO-220, IRFB4020PBF

Order No.: 31S3227
EAN: 4099879034113
MPN:
IRFB4020PBF
SP001564028
Series: IRFB
Infineon Technologies
IRFB4020PBF Infineon Technologies MOSFETs
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Key Specification:
Version N channel
max. Voltage 200 V
Max. current 18 A
drain-source on resistance RDS (on) max @VGS=10V 100 mΩ
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Unit Price (€ / pc.)
0.6307 € *
Available in 5 Days: 480 pcs. - if ordered today
Total Price:
6.31 € *
*incl. VAT plus shipping costs
Subject to prior sale
10 pcs.
0.6307 €
Description
Technical specifications
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Logistics
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MOSFET, IRFB4020PBF, Infineon Technologies

The IRFB4020PBF is specifically designed for class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • Key parameters optimized for class-D audio amplifier applications
  • Improved efficiency
  • Low Q for better THD and lower EMI
  • Can deliver up to 300 W per channel into 8 Ω load in half-bridge configuration amplifier

Applications

  • DC motors
  • Battery management systems
  • Inverters
  • DC-DC converters
Technical specifications
max. Voltage 200 V
max. operating temperature 175 °C
min. operating temperature -55 °C
drain-source on resistance RDS (on) max @VGS=10V 100 mΩ
Enclosure TO-220
Max. current 18 A
Power loss 52 W
Assembly THT
Version N channel
Gate Charge Qg @10V (nC) 1.8x10<sup>-8</sup> C
Articles of same specification 0
Logistics
Customs tariff number 85412900
Country of origin CN
Compliance
RoHS conform Yes
SVHC free Yes
Date of RoHS guidelines 3/31/15