Deutsch

IRFB3806PBF | Infineon Technologies

Infineon Technologies N channel HEXFET power MOSFET, 60 V, 43 A, TO-220, IRFB3806PBF

Order No.: 31S3226
EAN: 4099879034106
MPN:
IRFB3806PBF
SP001572380
Series: IRFB
Infineon Technologies
IRFB3806PBF Infineon Technologies MOSFETs
Image may differ
Print
Key Specification:
Version N channel
max. Voltage 60 V
Max. current 43 A
drain-source on resistance RDS (on) max @VGS=10V 15.8 mΩ
Download Datasheet Technical specifications
Unit Price (€ / pc.)
0.3808 € *
Available in 5 Days: 430 pcs. - if ordered today
Total Price:
3.81 € *
*incl. VAT plus shipping costs
Subject to prior sale
10 pcs.
0.3808 €
Description
Technical specifications
Download
Logistics
Compliance

MOSFET, IRFB3806PBF, Infineon Technologies

Features

  • Improved gate, avalanche and dynamic dV/dt ruggedness
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and dI/dt capability

Applications

  • High efficiency synchronous rectification in SMPS
  • Uninterruptible power supply
  • High speed power switching
  • Hard switched and high frequency circuits
Technical specifications
max. Voltage 60 V
max. operating temperature 175 °C
min. operating temperature -55 °C
drain-source on resistance RDS (on) max @VGS=10V 15.8 mΩ
Enclosure TO-220
Max. current 43 A
Power loss 71 W
Assembly THT
Version N channel
Gate Charge Qg @10V (nC) 2.2x10<sup>-8</sup> C
Articles of same specification 0
Logistics
Customs tariff number 85412900
Country of origin CN
Compliance
RoHS conform Yes
SVHC free Yes
Date of RoHS guidelines 3/31/15