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IRFB3206PBF | Infineon Technologies

Infineon Technologies N channel HEXFET power MOSFET, 60 V, 120 A, TO-220, IRFB3206PBF

Order No.: 31S3221
EAN: 4099879034076
MPN:
IRFB3206PBF
SP001566480
Series: IRFB
Infineon Technologies
IRFB3206PBF Infineon Technologies MOSFETs
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Key Specification:
Version N channel
max. Voltage 60 V
Max. current 120 A
drain-source on resistance RDS (on) max @VGS=10V 3 mΩ
Download Datasheet Technical specifications
Unit Price (€ / pc.)
1.428 € *
Available: 252 pcs.
Available in 5 Days: 360 pcs. - if ordered today
Total Price:
1.43 € *
*incl. VAT plus shipping costs
Subject to prior sale
1 pcs.
1.428 €
Description
Technical specifications
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Logistics
Compliance

MOSFET, IRFB3206PBF, Infineon Technologies

Features

  • Improved gate, avalanche and dynamic dV/dt ruggedness
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and dI/dt capability

Applications

  • High efficiency synchronous rectification in SMPS
  • Uninterruptible power supply
  • High speed power switching
  • Hard switched and high frequency circuits
Technical specifications
Power loss 300 W
Enclosure TO-220
Gate Charge Qg @10V (nC) 0.00000012 C
Max. current 120 A
max. Voltage 60 V
max. operating temperature 175 °C
min. operating temperature -55 °C
Version N channel
Assembly THT
drain-source on resistance RDS (on) max @VGS=10V 3 mΩ
Articles of same specification 0
Logistics
Original Packaging Bar with 100 pieces
Country of origin CN
Customs tariff number 85412900
Compliance
SVHC free Yes
Date of RoHS guidelines 3/31/15
RoHS conform Yes