IRF9Z34NPBF | Infineon Technologies
Infineon Technologies P-channel HEXFET power MOSFET, -55 V, -19 A, TO-220, IRF9Z34NPBF
Unit Price (€ / pc.)
0.3927 € *
Available in 5 Days: 2,730 pcs. - if ordered today
MOSFET, IRF9Z34NPBF, Infineon Technologies
The IRF9Z34NPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.
Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
- P-channel
Applications
- DC motors
- Inverters
- SMPS
- Lighting
- Load switches
- Battery powered applications
Technical specifications
| max. operating temperature | 150 °C | |
| Max. current | -19 A | |
| Power loss | 68 W | |
| min. operating temperature | -40 °C | |
| drain-source on resistance RDS (on) max @VGS=10V | 100 mΩ | |
| Version | P-channel | |
| max. Voltage | -55 V | |
| Assembly | THT | |
| Gate Charge Qg @10V (nC) | 3.5x10<sup>-8</sup> C | |
| Enclosure | TO-220 |
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Logistics
| Country of origin | US |
| Customs tariff number | 85412900 |
| Original Packaging | Bar with 50 pieces |
Compliance
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |