IRF7341TRPBF | Infineon Technologies
Infineon Technologies N channel dual HEXFET power MOSFET, SOIC-8, IRF7341TRPBF
Order No.: 54S1064
MPN:
IRF7341TRPBF
SP001554204
Unit Price (€ / pc.)
0.4403 € *
Standard delivery time from the manufacturer is: 12 Weeks
Power MOSFET, IRF7341TRPBF, INFINEON
Fifth Generation HEXFET from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Features
- RoHS compliant
- Low RDS(on)
- Dynamic dv/dt rating
- Dual N-channel MOSFET
- Lead-free
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Gate Charge Qg @10V (nC) | 2.4x10<sup>-8</sup> C | |
| drain-source on resistance RDS (on) max @VGS=4,5V | 65 mΩ | |
| Assembly | SMD | |
| drain-source on resistance RDS (on) max @VGS=10V | 50 mΩ | |
| Version | N channel | |
| max. operating temperature | 150 °C | |
| Enclosure | SOIC-8 | |
| min. operating temperature | -55 °C |
Download
Logistics
| Property | Value |
|---|---|
| Country of origin | CN |
| Original Packaging | Reel with 4,000 pieces |
Compliance
| Property | Value |
|---|---|
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
| RoHS conform | Yes |