IRF540NSTRLPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, D2PAK, IRF540NSTRLPBF
Power MOSFET, IRF540NSTRLPBF, INFINEON
Advanced HEXFET Power MOSFET from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D²Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D²Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
Features
- Planar cell structure for wide SOA
- Optimized for broadest availability from distribution partners
- Silicon optimized for applications switching below < 100 kHz
- Industry standard surface-mount power package
- Capable of being wave-soldered
| Filter | Property | Value |
|---|---|---|
| Assembly | SMD | |
| drain-source on resistance RDS (on) max @VGS=10V | 44 mΩ | |
| max. operating temperature | 175 °C | |
| min. operating temperature | -55 °C | |
| Enclosure | D2PAK | |
| Version | N channel | |
| Gate Charge Qg @10V (nC) | 7.1x10<sup>-8</sup> C |
| Property | Value |
|---|---|
| Country of origin | CN |
| Original Packaging | Reel with 800 pieces |
| Property | Value |
|---|---|
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |