IRF530NPBF | Infineon Technologies

Infineon Technologies N channel HEXFET power MOSFET, 100 V, 17 A, TO-220, IRF530NPBF

Order No.: 24S3238
EAN: 4099879033178
MPN:
IRF530NPBF
Series: IRF
IRF530NPBF Infineon Technologies MOSFETs
Image may differ
Unit Price (€ / pc.)
0.4165 € *
Available: 67 pcs.
Next delivery: 80 pcs. on 2025-10-13
Available in 5 Days: 5,370 pcs. - if ordered today
Total Price:
0.42 € *
Price list
Quantity
Price per unit*
1 pcs.
0.4165 €
10 pcs.
0.4046 €
50 pcs.
0.3927 €
100 pcs.
0.3689 €
500 pcs.
0.3451 €
*incl. VAT plus shipping costs
Subject to prior sale

MOSFET, IRF530NPBF, Infineon Technologies

The IRF530NPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.

Features

  • Advanced process technology
  • Ultra low on-resistance
  • Dynamic dv/dt rating
  • Fast switching

Applications

  • DC motors
  • Inverters
  • SMPS
  • Lighting
  • Load switches
  • Battery powered applications
Technical specifications
Filter Property Value
max. Voltage 100 V
Assembly THT
Power loss 70 W
drain-source on resistance RDS (on) max @VGS=10V 90 mΩ
max. operating temperature 175 °C
Version N channel
Gate Charge Qg @10V (nC) 3.7x10<sup>-8</sup> C
Enclosure TO-220
min. operating temperature -55 °C
Max. current 17 A
Logistics
Property Value
Country of origin MX
Original Packaging Bar with 50 pieces
Customs tariff number 85412900
Compliance
Property Value
SVHC free Yes
Date of RoHS guidelines 3/31/15
RoHS conform Yes