IRF5305PBF | Infineon Technologies
Infineon Technologies P-channel HEXFET power MOSFET, -55 V, -31 A, TO-220, IRF5305PBF
Unit Price (€ / pc.)
0.5474 € *
Available in 5 Days: 3,960 pcs. - if ordered today
MOSFET, IRF5305PBF, Infineon Technologies
The IRF5305PBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.
Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
Applications
- DC motors
- Inverters
- SMPS
- Lighting
- Load switches
- Battery powered applications
Technical specifications
| max. Voltage | -55 V | |
| max. operating temperature | 175 °C | |
| min. operating temperature | -55 °C | |
| drain-source on resistance RDS (on) max @VGS=10V | 60 mΩ | |
| Enclosure | TO-220 | |
| Max. current | -31 A | |
| Power loss | 110 W | |
| Assembly | THT | |
| Version | P-channel | |
| Gate Charge Qg @10V (nC) | 6.3x10<sup>-8</sup> C |
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Logistics
| Original Packaging | Bar with 1 piece |
| Customs tariff number | 85412900 |
| Country of origin | KR |
Compliance
| RoHS conform | Yes |
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |