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IRF3415PBF | Infineon Technologies

Infineon Technologies N channel HEXFET power MOSFET, 150 V, 43 A, TO-220, IRF3415PBF

Order No.: 31S3086
EAN: 4099879033994
MPN:
IRF3415PBF
SP001564438
Series: IRF
Infineon Technologies
IRF3415PBF Infineon Technologies MOSFETs
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Key Specification:
Version N channel
max. Voltage 150 V
Max. current 43 A
drain-source on resistance RDS (on) max @VGS=10V 42 mΩ
Download Datasheet Technical specifications
Unit Price (€ / pc.)
0.9877 € *
Available in 5 Days: 400 pcs. - if ordered today
Total Price:
9.88 € *
*incl. VAT plus shipping costs
Subject to prior sale
10 pcs.
0.9877 €
Description
Technical specifications
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Logistics
Compliance

MOSFET, IRF3415PBF, Infineon Technologies

The IRF3415PBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.

Features

  • Advanced process technology
  • Ultra low on-resistance
  • Dynamic dv/dt rating
  • Fast switching
  • Avalanche rated
Technical specifications
Power loss 200 W
Max. current 43 A
drain-source on resistance RDS (on) max @VGS=10V 42 mΩ
max. operating temperature 175 °C
max. Voltage 150 V
Gate Charge Qg @10V (nC) 0.0000002 C
Assembly THT
min. operating temperature -55 °C
Enclosure TO-220
Version N channel
Articles of same specification 0
Logistics
Country of origin PH
Customs tariff number 85412900
Compliance
Date of RoHS guidelines 3/31/15
RoHS conform Yes
SVHC free Yes