IRF3205STRLPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 55 V, 110 A, TO-263, IRF3205STRLPBF
Unit Price (€ / pc.)
0.5474 € *
Standard delivery time from the manufacturer is: 18 Weeks
MOSFET, IRF3205STRLPBF, Infineon Technologies
The IRF3205STRLPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.
Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
- Avalanche rated
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Power loss | 200 W | |
| Enclosure | TO-263 | |
| Gate Charge Qg @10V (nC) | 0.000000146 C | |
| Max. current | 110 A | |
| max. Voltage | 55 V | |
| max. operating temperature | 175 °C | |
| min. operating temperature | -55 °C | |
| Version | N channel | |
| Assembly | SMD | |
| drain-source on resistance RDS (on) max @VGS=10V | 8 mΩ |
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Logistics
| Property | Value |
|---|---|
| Original Packaging | Reel with 800 pieces |
| MSL | MSL 1 |
| Customs tariff number | 85412900 |
Compliance
| Property | Value |
|---|---|
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |