IRF1310NPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 100 V, 42 A, TO-220, IRF1310NPBF
NCNR (non cancelable / non returnable)
Unit Price (€ / pc.)
1.0115 € *
Available in 5 Days: 70 pcs. - if ordered today
Total Price:
10.12 € *
Price list
Quantity
Price per unit*
10 pcs.
1.0115 €
50 pcs.
0.9401 €
100 pcs.
0.8806 €
*incl. VAT plus shipping costs
Subject to prior sale
MOSFET, IRF1310NPBF, Infineon Technologies
The IRF1310NPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.
Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
- Avalanche rated
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Version | N channel | |
| max. Voltage | 100 V | |
| Max. current | 42 A | |
| drain-source on resistance RDS (on) max @VGS=10V | 36 mΩ | |
| Enclosure | TO-220 | |
| Gate Charge Qg @10V (nC) | 0.00000011 C | |
| Power loss | 160 W | |
| Assembly | THT | |
| min. operating temperature | -55 °C | |
| max. operating temperature | 175 °C |
Download
Logistics
| Property | Value |
|---|---|
| Customs tariff number | 85412900 |
| Country of origin | CN |
Compliance
| Property | Value |
|---|---|
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |