IRF1310NPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 100 V, 42 A, TO-220, IRF1310NPBF
Unit Price (€ / pc.)
0.7259 € *
Available in 5 Days: 170 pcs. - if ordered today
MOSFET, IRF1310NPBF, Infineon Technologies
The IRF1310NPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.
Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
- Avalanche rated
Technical specifications
| max. Voltage | 100 V | |
| max. operating temperature | 175 °C | |
| min. operating temperature | -55 °C | |
| drain-source on resistance RDS (on) max @VGS=10V | 36 mΩ | |
| Enclosure | TO-220 | |
| Max. current | 42 A | |
| Power loss | 160 W | |
| Assembly | THT | |
| Version | N channel | |
| Gate Charge Qg @10V (nC) | 1.1x10<sup>-7</sup> C |
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Logistics
| Customs tariff number | 85412900 |
| Country of origin | CN |
Compliance
| RoHS conform | Yes |
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |