IPZ65R065C7XKSA1 | Infineon Technologies
Infineon Technologies N channel CoolMOSC7 power transistor, 650 V, 33 A, TO-247, IPZ65R065C7XKSA1
Unit Price (€ / pc.)
4.4863 € *
Standard delivery time from the manufacturer is: 17 Weeks
MOSFET, IPZ65R065C7XKSA1, Infineon Technologies
The IPZ65R065C7XKSA1 is a high voltage power MOSFET that is designed according to the super junction.
Features
- Increased MOSFET dv/dt ruggedness
- Easy to use/drive due to driver source pin for better control of the gate
- Qualified for industrial grade applications
Applications
- Enabling higher system efficiency
- Enabling higher frequency/increased power density solutions
- System cost/size savings due to reduced cooling requirements
- Higher system reliability due to lower operating temperatures
Technical specifications
| Filter | Property | Value |
|---|---|---|
| max. Voltage | 650 V | |
| drain-source on resistance RDS (on) max @VGS=10V | 65 mΩ | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Gate Charge Qg @10V (nC) | 6.4x10<sup>-8</sup> C | |
| Max. current | 33 A | |
| Enclosure | TO-247 | |
| Assembly | THT | |
| Power loss | 171 W | |
| Version | N channel |
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Logistics
| Property | Value |
|---|---|
| Original Packaging | Bar with 30 pieces |
| Customs tariff number | 85412900 |
| MSL | MSL 1 |
Compliance
| Property | Value |
|---|---|
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |
| SVHC free | Yes |