IPT007N06N | Infineon Technologies
Infineon Technologies N channel OptiMOS power transistor, PG-HSOF-8, IPT007N06N
Order No.: 54S1078
MPN:
IPT007N06N
SP001100158
Unit Price (€ / pc.)
5.8429 € *
Standard delivery time from the manufacturer is: 28 Weeks
Power transistor, IPT007N06N, INFINEON
Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.
Features
- Superior thermal resistance
- N-channel
- Pb-free lead plating; RoHS compliant
- Halogen free
- Highest current capability > 480 A
Applications
- Forklift
- Telecom
- Efuse
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Gate Charge Qg @10V (nC) | 0.000000216 C | |
| Assembly | SMD | |
| drain-source on resistance RDS (on) max @VGS=10V | 0.75 mΩ | |
| Version | N channel | |
| max. operating temperature | 175 °C | |
| Enclosure | PG-HSOF-8 | |
| min. operating temperature | -55 °C |
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Logistics
| Property | Value |
|---|---|
| Country of origin | MY |
| Original Packaging | Reel with 2,000 pieces |
Compliance
| Property | Value |
|---|---|
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
| RoHS conform | Yes |