IPT004N03LATMA1 | Infineon Technologies

Name: Infineon Technologies N channel OptiMOSP2 power transistor, 30 V, 300 A, HSOF, IPT004N03LATMA1
Brand: Infineon Technologies
SKU: 54S1001
Availability: InStock

Infineon Technologies N channel OptiMOSP2 power transistor, 30 V, 300 A, HSOF, IPT004N03LATMA1

Order No.: 54S1001

EAN: 4099879034687

MPN:

IPT004N03LATMA1

SP001100156

Series: IPT

IPT004N03LATMA1 Infineon Technologies MOSFETs

Image may differ

Key Specification:

Version N channel

max. Voltage 30 V

Max. current 300 A

drain-source on resistance RDS (on) max @VGS=4,5V 0.5 mΩ

drain-source on resistance RDS (on) max @VGS=10V 0.4 Ω

Download Datasheet Technical specifications

Unit Price (€ / pc.)

2.9155 € *

Standard delivery time from the manufacturer is: 20 Weeks

Total Price:

2.92 € *

Price list

Quantity

Price per unit*

1 pcs.

2.9155 €

50 pcs.

2.7132 €

250 pcs.

2.4990 €

*incl. VAT plus shipping costs

Subject to prior sale

Description

MOSFET, IPT004N03LATMA1, Infineon Technologies

Features

P-channel
Enhancement mode
Logic level
Avalanche rated

Applications

Forklift
Light electric vehicles (LEV) e.g. e-scooter, e-bikes or µ-car
Point-of-load (POL)
Telecom
eFuse

Technical specifications

Filter	Property	Value
	drain-source on resistance RDS (on) max @VGS=4,5V	0.5 mΩ
	Power loss	300 W
	Max. current	300 A
	drain-source on resistance RDS (on) max @VGS=10V	0.4 Ω
	max. operating temperature	150 °C
	max. Voltage	30 V
	Gate Charge Qg @10V (nC)	0.000000252 C
	Assembly	SMD
	min. operating temperature	-55 °C
	Enclosure	HSOF
	Version	N channel