Deutsch

IPI147N12N3GAKSA1 | Infineon Technologies

Infineon Technologies N channel OptiMOS3 power transistor, 120 V, 56 A, PG-TO262-3, IPI147N12N3GAKSA1

Order No.: 88S9345
EAN: 4099879035332
MPN:
IPI147N12N3GAKSA1
SP000652744
Series: IPI
Infineon Technologies
IPI147N12N3GAKSA1 Infineon Technologies MOSFETs Image 1
IPI147N12N3GAKSA1 Infineon Technologies MOSFETs Image 2
Image may differ
Print
Key Specification:
Version N channel
max. Voltage 120 V
Max. current 56 A
drain-source on resistance RDS (on) max @VGS=10V 14.7 mΩ

Ordering Information:

NCNR product is not cancelable/returnable
Download Datasheet Technical specifications
Unit Price (€ / pc.)
1.2019 € *
Standard delivery time from the manufacturer is: 52 Weeks
Total Price:
600.95 € *
*incl. VAT plus shipping costs
Subject to prior sale
500 pcs.
1.2019 €
Description
Technical specifications
Download
Logistics
Compliance

MOSFET, IPI147N12N3GAKSA1, Infineon Technologies

Features

  • N-channel
  • Excellent gate charge
  • Very low on-resistance
  • Ideal for high-frequency switching and synchronous rectification

Applications

  • Synchronous rectification for AC-DC SMPS
  • Motor control for 12 V–48 V systems
  • Isolated DC-DC converters
  • Or-ing switches and circuit breakers in 48 V systems
  • Class D audio amplifiers
Technical specifications
Power loss 107 W
Max. current 56 A
drain-source on resistance RDS (on) max @VGS=10V 14.7 mΩ
max. operating temperature 175 °C
max. Voltage 120 V
Gate Charge Qg @10V (nC) 3.7x10<sup>-8</sup> C
Assembly THT
min. operating temperature -55 °C
Enclosure PG-TO262-3
Version N channel
Articles of same specification 0
Logistics
Original Packaging Bar with 1 piece
Customs tariff number 85412900
Compliance
Date of RoHS guidelines 3/31/15
RoHS conform Yes
SVHC free Yes