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IPI086N10N3GXKSA1 | Infineon Technologies

Infineon Technologies N channel OptiMOS3 power transistor, 100 V, 80 A, PG-TO262-3, IPI086N10N3GXKSA1

Order No.: 88S9330
EAN: 4099879035318
MPN:
IPI086N10N3GXKSA1
SP000683070
Series: IPI
Infineon Technologies
IPI086N10N3GXKSA1 Infineon Technologies MOSFETs
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Key Specification:
Version N channel
max. Voltage 100 V
Max. current 80 A
drain-source on resistance RDS (on) max @VGS=10V 8.6 mΩ
Download Datasheet Technical specifications
Unit Price (€ / pc.)
2.6894 € *
Standard delivery time from the manufacturer is: 1 Week
Total Price:
26.89 € *
*incl. VAT plus shipping costs
Subject to prior sale
10 pcs.
2.6894 €
Description
Technical specifications
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Logistics
Compliance

MOSFET, IPI086N10N3GXKSA1, Infineon Technologies

Features

  • N-channel
  • Excellent gate charge
  • Very low on-resistance
  • Ideal for high-frequency switching and synchronous rectification

Applications

  • Synchronous rectification for AC-DC SMPS
  • Motor control for 48 V–80 V systems
  • Isolated DC-DC converters
  • Or-ing switches and circuit breakers in 48 V systems
  • Class D audio amplifiers
  • Uninterruptible power supplies (UPS)
Technical specifications
Max. current 80 A
Version N channel
Enclosure PG-TO262-3
max. Voltage 100 V
max. operating temperature 175 °C
Power loss 125 W
drain-source on resistance RDS (on) max @VGS=10V 8.6 mΩ
Assembly THT
Gate Charge Qg @10V (nC) 4.2x10<sup>-8</sup> C
min. operating temperature -55 °C
Articles of same specification 0
Logistics
Original Packaging Bar with 500 pieces
Customs tariff number 85412900
Compliance
SVHC free Yes
RoHS conform Yes
Date of RoHS guidelines 3/31/15