IPI045N10N3GXKSA1 | Infineon Technologies
Infineon Technologies N channel OptiMOS3 power transistor, 100 V, 100 A, PG-TO262-3, IPI045N10N3GXKSA1
Unit Price (€ / pc.)
2.1301 € *
Standard delivery time from the manufacturer is: 1 Week
Total Price:
2.13 € *
Price list
Quantity
Price per unit*
1 pcs.
2.1301 €
25 pcs.
2.0587 €
50 pcs.
1.9873 €
100 pcs.
1.9159 €
250 pcs.
1.8802 €
*incl. VAT plus shipping costs
Subject to prior sale
MOSFET, IPI045N10N3GXKSA1, Infineon Technologies
Features
- N-channel
- Excellent gate charge
- Normal level
- Very low on-resistance
- Ideal for high-frequency switching and synchronous rectification
Applications
- Synchronous rectification for AC-DC SMPS
- Motor control for 48 V–80 V systems
- Isolated DC-DC converters
- Or-ing switches and circuit breakers in 48 V systems
- Class D audio amplifiers
- Uninterruptible power supplies (UPS)
Technical specifications
| Max. current | 100 A | |
| Gate Charge Qg @10V (nC) | 8.8x10<sup>-8</sup> C | |
| Power loss | 214 W | |
| max. Voltage | 100 V | |
| max. operating temperature | 175 °C | |
| Assembly | THT | |
| Enclosure | PG-TO262-3 | |
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 4.5 mΩ | |
| min. operating temperature | -55 °C |
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Logistics
| Original Packaging | Bar with 150 pieces |
| Customs tariff number | 85412900 |
Compliance
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |
| SVHC free | Yes |