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IPI024N06N3GXKSA1 | Infineon Technologies

Infineon Technologies N channel OptiMOS3 power transistor, 60 V, 120 A, PG-TO262-3, IPI024N06N3GXKSA1

Order No.: 88S9311
EAN: 4099879035295
MPN:
IPI024N06N3GXKSA1
SP000680644
Series: IPI
Infineon Technologies
IPI024N06N3GXKSA1 Infineon Technologies MOSFETs Image 1
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Key Specification:
Version N channel
max. Voltage 60 V
Max. current 120 A
drain-source on resistance RDS (on) max @VGS=10V 2.4 mΩ

Ordering Information:

NCNR product is not cancelable/returnable
Download Datasheet Technical specifications
Unit Price (€ / pc.)
2.856 € *
Standard delivery time from the manufacturer is: 14 Weeks
Total Price:
142.80 € *
*incl. VAT plus shipping costs
Subject to prior sale
50 pcs.
2.856 €
Description
Technical specifications
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Logistics
Compliance

Power transistor, IPI024N06N3GXKSA1, Infineon

OptiMOS Power-Transistor, ideal for high frequency switching and syncing with very low on-resistance and 100% avalanche tested.

Features

  • Excellent gate charge
  • Halogen-free
  • Optimized technology for DC/DC converters
  • Ideal for high frequency switching
Technical specifications
Power loss 250 W
Max. current 120 A
drain-source on resistance RDS (on) max @VGS=10V 2.4 mΩ
max. operating temperature 175 °C
max. Voltage 60 V
Gate Charge Qg @10V (nC) 0.000000206 C
Assembly THT
min. operating temperature -55 °C
Enclosure PG-TO262-3
Version N channel
Articles of same specification 0
Logistics
Original Packaging Bar with 500 pieces
Customs tariff number 85412900
Compliance
Date of RoHS guidelines 3/31/15
RoHS conform Yes
SVHC free Yes