IPD60R1K4C6 | Infineon Technologies
Infineon Technologies N channel CoolMOSC6 power transistor, DPAK, IPD60R1K4C6
Order No.: 54S1071
MPN:
IPD60R1K4C6
SP001292870
Unit Price (€ / pc.)
0.6902 € *
Standard delivery time from the manufacturer is: 22 Weeks
Power transistor, IPD60R1K4C6, INFINEON
CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superjunction (SJ) principle and pioneered by Infenion Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class inovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremly low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Features
- Industry standard surface - mount power package
- Silicon optimized for applications switching below < 100 kHz
- Softer body-diode compared to previous silicon generation
- Standard pinout allows for drop in replacement
- High performance in low frequency applications
Applications
- Battery protection
- SMPS
- DC switch
- Load switch
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 1400 mΩ | |
| Enclosure | DPAK | |
| Gate Charge Qg @10V (nC) | 9.4x10<sup>-9</sup> C | |
| Assembly | SMD | |
| min. operating temperature | -55 °C | |
| max. operating temperature | 150 °C |
Download
Logistics
| Property | Value |
|---|---|
| Original Packaging | Reel with 2,500 pieces |
| Country of origin | CN |
Compliance
| Property | Value |
|---|---|
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
| RoHS conform | Yes |