IPD60R1K4C6 | Infineon Technologies

Infineon Technologies N channel CoolMOSC6 power transistor, DPAK, IPD60R1K4C6

Order No.: 54S1071
MPN:
IPD60R1K4C6
SP001292870
IPD60R1K4C6 Infineon Technologies MOSFETs
Image may differ
Unit Price (€ / pc.)
0.6902 € *
Standard delivery time from the manufacturer is: 22 Weeks
Total Price:
1,725.50 € *
*incl. VAT plus shipping costs
Subject to prior sale
2500 pcs.
0.6902 €

Power transistor, IPD60R1K4C6, INFINEON

CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superjunction (SJ) principle and pioneered by Infenion Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class inovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremly low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

Features

  • Industry standard surface - mount power package
  • Silicon optimized for applications switching below < 100 kHz
  • Softer body-diode compared to previous silicon generation
  • Standard pinout allows for drop in replacement
  • High performance in low frequency applications

Applications

  • Battery protection
  • SMPS
  • DC switch
  • Load switch
Technical specifications
Filter Property Value
Assembly SMD
drain-source on resistance RDS (on) max @VGS=10V 1400 mΩ
max. operating temperature 150 °C
min. operating temperature -55 °C
Enclosure DPAK
Version N channel
Gate Charge Qg @10V (nC) 9.4x10<sup>-9</sup> C
Logistics
Property Value
Country of origin CN
Original Packaging Reel with 2,500 pieces
Compliance
Property Value
SVHC free Yes
Date of RoHS guidelines 3/31/15
RoHS conform Yes