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IPB80N06S407ATMA2 | Infineon Technologies

Infineon Technologies N channel OptiMOST2 power transistor, 60 V, 80 A, PG-TO263-3, IPB80N06S407ATMA2

Order No.: 88S9124
EAN: 4099879035288
MPN:
IPB80N06S407ATMA2
SP001028672
Series: IPB
Infineon Technologies
IPB80N06S407ATMA2 Infineon Technologies MOSFETs
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Key Specification:
Version N channel
max. Voltage 60 V
Max. current 80 A
drain-source on resistance RDS (on) max @VGS=10V 7.1 mΩ

Ordering Information:

NCNR product is not cancelable/returnable
Download Datasheet Technical specifications
Unit Price (€ / pc.)
0.7616 € *
Standard delivery time from the manufacturer is: 9 Weeks
Total Price:
761.60 € *
*incl. VAT plus shipping costs
Subject to prior sale
1000 pcs.
0.7616 €
Description
Technical specifications
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Logistics
Compliance

MOSFET, IPB80N06S407ATMA2, Infineon Technologies

Features

  • N-channel
  • Enhancement mode
  • MSL1 up to 260°C peak reflow
  • Avalanche rated

Applications

  • Valves control
  • Solenoids control
  • Lighting
  • Single-ended motors
Technical specifications
max. Voltage 60 V
drain-source on resistance RDS (on) max @VGS=10V 7.1 mΩ
max. operating temperature 175 °C
min. operating temperature -55 °C
Gate Charge Qg @10V (nC) 4.3x10<sup>-8</sup> C
Max. current 80 A
Enclosure PG-TO263-3
Assembly SMD
Power loss 79 W
Version N channel
Articles of same specification 0
Logistics
Original Packaging Reel with 1,000 pieces
Customs tariff number 85412900
Compliance
Date of RoHS guidelines 3/31/15
RoHS conform Yes
SVHC free Yes