IPB090N06N3GATMA1 | Infineon Technologies

Name: Infineon Technologies N channel OptiMOS3 power transistor, 60 V, 50 A, PG-TO263-3, IPB090N06N3GATMA1
Brand: Infineon Technologies
SKU: 88S8985
Price: 1.30 EUR
Availability: OutOfStock

Infineon Technologies N channel OptiMOS3 power transistor, 60 V, 50 A, PG-TO263-3, IPB090N06N3GATMA1

Order No.: 88S8985

EAN: 4099879035219

MPN:

IPB090N06N3GATMA1

SP000398042

Series: IPB

Image may differ

Key Specification:

Version N channel

max. Voltage 60 V

Max. current 50 A

drain-source on resistance RDS (on) max @VGS=10V 9 mΩ

Ordering Information:

NCNR product is not cancelable/returnable

Download Datasheet Technical specifications

Unit Price (€ / pc.)

1.2971 € *

Available: 0 pcs.

Leadtime: On Request **

Add to Cart

Total Price:

1.30 € *

Price list

Quantity

Price per unit*

3 pcs.

1.2971 €

15 pcs.

1.1305 €

75 pcs.

1.0115 €

400 pcs.

0.9044 €

1000 pcs.

0.8211 €

*incl. VAT plus shipping costs

**Subject to prior sale

Description

MOSFET, IPB090N06N3GATMA1, Infineon Technologies

Features

N-channel
Excellent gate charge
Very low on-resistance
Avalanche rated

Applications

Synchronous rectification
Solar micro inverter
Isolated DC-DC converters
Motor control for 12-48 V systems
Or-ing switches

Technical specifications

	Version	N channel
	drain-source on resistance RDS (on) max @VGS=10V	9 mΩ
	Gate Charge Qg @10V (nC)	3.6x10<sup>-8</sup> C
	Enclosure	PG-TO263-3
	max. Voltage	60 V
	Max. current	50 A
	max. operating temperature	175 °C
	min. operating temperature	-55 °C
	Assembly	SMD
	Power loss	71 W