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IPB090N06N3GATMA1 | Infineon Technologies

Infineon Technologies N channel OptiMOS3 power transistor, 60 V, 50 A, PG-TO263-3, IPB090N06N3GATMA1

Order No.: 88S8985
EAN: 4099879035219
MPN:
IPB090N06N3GATMA1
SP000398042
Series: IPB
Infineon Technologies
IPB090N06N3GATMA1 Infineon Technologies MOSFETs
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Key Specification:
Version N channel
max. Voltage 60 V
Max. current 50 A
drain-source on resistance RDS (on) max @VGS=10V 9 mΩ

Ordering Information:

NCNR product is not cancelable/returnable
Download Datasheet Technical specifications
Unit Price (€ / pc.)
0.4046 € *
Standard delivery time from the manufacturer is: 14 Weeks
Total Price:
404.60 € *
*incl. VAT plus shipping costs
Subject to prior sale
1000 pcs.
0.4046 €
Description
Technical specifications
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Logistics
Compliance

MOSFET, IPB090N06N3GATMA1, Infineon Technologies

Features

  • N-channel
  • Excellent gate charge
  • Very low on-resistance
  • Avalanche rated

Applications

  • Synchronous rectification
  • Solar micro inverter
  • Isolated DC-DC converters
  • Motor control for 12-48 V systems
  • Or-ing switches
Technical specifications
max. Voltage 60 V
drain-source on resistance RDS (on) max @VGS=10V 9 mΩ
max. operating temperature 175 °C
min. operating temperature -55 °C
Gate Charge Qg @10V (nC) 3.6x10<sup>-8</sup> C
Max. current 50 A
Enclosure PG-TO263-3
Assembly SMD
Power loss 71 W
Version N channel
Articles of same specification 0
Logistics
Original Packaging Reel with 1 piece
Customs tariff number 85412900
Compliance
Date of RoHS guidelines 3/31/15
RoHS conform Yes
SVHC free Yes