IPA80R1K4P7XKSA1 | Infineon Technologies
Infineon Technologies N channel CoolMOSP7 power device, 800 V, 4 A, TO-220, IPA80R1K4P7XKSA1
Unit Price (€ / pc.)
0.7378 € *
Standard delivery time from the manufacturer is: 17 Weeks
Total Price:
0.74 € *
Price list
Quantity
Price per unit*
1 pcs.
0.7378 €
50 pcs.
0.6902 €
250 pcs.
0.6307 €
*incl. VAT plus shipping costs
Subject to prior sale
MOSFET, IPA80R1K4P7XKSA1, Infineon Technologies
Features
- Enables high power density design
- Integrated zener diode
- ESD protected
Applications
- Industrial applications
- Adapters
- LED lighting
- Consumer applications
Technical specifications
| Filter | Property | Value |
|---|---|---|
| max. Voltage | 800 V | |
| drain-source on resistance RDS (on) max @VGS=10V | 1.4 Ω | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Gate Charge Qg @10V (nC) | 1x10<sup>-8</sup> C | |
| Max. current | 4 A | |
| Enclosure | TO-220 | |
| Assembly | THT | |
| Power loss | 24 W | |
| Version | N channel |
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Logistics
| Property | Value |
|---|---|
| Original Packaging | Bar with 50 pieces |
| Customs tariff number | 85413000 |
Compliance
| Property | Value |
|---|---|
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |
| SVHC free | Yes |