IPA65R310CFDXKSA1 | Infineon Technologies
Infineon Technologies N channel CoolMOSCFD2 power transistor, 700 V, 11.4 A, PG-TO220-3, IPA65R310CFDXKSA1
Unit Price (€ / pc.)
1.8683 € *
Standard delivery time from the manufacturer is: On Request
MOSFET, IPA65R310CFDXKSA1, Infineon Technologies
The IPA65R310CFDXKSA1 is a high voltage power MOSFET that is designed according to the super junction that offers a fast and a robust body diode.
Features
- Ultra fast body diode
- Very high commutation ruggedness
- Extremely low loses
- Easy to use/drive
Applications
- For resonant switching PWM
- PC silverbox
- Lighting
- Server and telecom
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Assembly | THT | |
| Power loss | 32 W | |
| drain-source on resistance RDS (on) max @VGS=10V | 310 mΩ | |
| max. operating temperature | 150 °C | |
| Max. current | 11.4 A | |
| min. operating temperature | -55 °C | |
| Enclosure | PG-TO220-3 | |
| Version | N channel | |
| max. Voltage | 700 V | |
| Gate Charge Qg @10V (nC) | 4.1x10<sup>-8</sup> C |
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Logistics
| Property | Value |
|---|---|
| Customs tariff number | 85412900 |
| Original Packaging | Bar with 50 pieces |
Compliance
| Property | Value |
|---|---|
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |