IPA086N10N3GXKSA1 | Infineon Technologies

Infineon Technologies N channel OptiMOS3 power transistor, 100 V, 45 A, PG-TO220-3, IPA086N10N3GXKSA1

Order No.: 88S8847
EAN: 4099879035189
MPN:
IPA086N10N3GXKSA1
SP000485984
Series: IPA
IPA086N10N3GXKSA1 Infineon Technologies MOSFETs
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Unit Price (€ / pc.)
1.1424 € *
Standard delivery time from the manufacturer is: 1 Week
Total Price:
1.14 € *
Price list
Quantity
Price per unit*
1 pcs.
1.1424 €
25 pcs.
1.1067 €
50 pcs.
1.0710 €
100 pcs.
0.9996 €
250 pcs.
0.9282 €
*incl. VAT plus shipping costs
Subject to prior sale

MOSFET, IPA086N10N3GXKSA1, Infineon Technologies

Features

  • N-channel
  • Excellent gate charge
  • Very low on-resistance
  • Ideal for high-frequency switching and synchronous rectification

Applications

  • Synchronous rectification for AC-DC SMPS
  • Motor control for 48 V–80 V systems
  • Isolated DC-DC converters
  • Or-ing switches and circuit breakers in 48 V systems
  • Class D audio amplifiers
  • Uninterruptible power supplies (UPS)
Technical specifications
Max. current 45 A
Gate Charge Qg @10V (nC) 4.2x10<sup>-8</sup> C
Power loss 37.5 W
max. Voltage 100 V
max. operating temperature 175 °C
Assembly THT
Enclosure PG-TO220-3
Version N channel
drain-source on resistance RDS (on) max @VGS=10V 8.6 mΩ
min. operating temperature -55 °C
Logistics
Original Packaging Bar with 476 pieces
Customs tariff number 85412900
Compliance
Date of RoHS guidelines 3/31/15
RoHS conform Yes
SVHC free Yes