IPA057N06N3GXKSA1 | Infineon Technologies
Infineon Technologies N channel OptiMOS3 power transistor, 60 V, 60 A, PG-TO220-3, IPA057N06N3GXKSA1
Unit Price (€ / pc.)
2.1182 € *
Standard delivery time from the manufacturer is: On Request
MOSFET, IPA057N06N3GXKSA1, Infineon Technologies
Features
- Optimized technology for DC/DC converters
- N-channel
- Normal level
- Avalanche rated
Applications
- Synchronous rectification
- Solar micro inverter
- Isolated DC-DC converters
- Motor control for 12-48 V systems
- Or-ing switches
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Assembly | THT | |
| Power loss | 38 W | |
| drain-source on resistance RDS (on) max @VGS=10V | 5.7 mΩ | |
| max. operating temperature | 175 °C | |
| Max. current | 60 A | |
| min. operating temperature | -55 °C | |
| Enclosure | PG-TO220-3 | |
| Version | N channel | |
| max. Voltage | 60 V | |
| Gate Charge Qg @10V (nC) | 6.1x10<sup>-8</sup> C |
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Logistics
| Property | Value |
|---|---|
| Customs tariff number | 85412900 |
| Original Packaging | Bar with 500 pieces |
Compliance
| Property | Value |
|---|---|
| SVHC free | Yes |
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |