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BSZ520N15NS3GATMA1 | Infineon Technologies

Infineon Technologies N channel OptiMOS3 power transistor, 150 V, 21 A, TSDSON-8, BSZ520N15NS3GATMA1

Order No.: 51S2395
EAN: 4099879034663
MPN:
BSZ520N15NS3GATMA1
SP000607022
Series: BSZ520
Infineon Technologies
BSZ520N15NS3GATMA1 Infineon Technologies MOSFETs
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Key Specification:
Version N channel
max. Voltage 150 V
Max. current 21 A
drain-source on resistance RDS (on) max @VGS=10V 52 mΩ
Download Datasheet Technical specifications
Unit Price (€ / pc.)
1.3685 € *
Standard delivery time from the manufacturer is: 1 Week
Total Price:
13.68 € *
*incl. VAT plus shipping costs
Subject to prior sale
10 pcs.
1.3685 €
Description
Technical specifications
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Logistics
Compliance

MOSFET, BSZ520N15NS3GATMA1, Infineon Technologies

Features

  • Optimized for DC/DC conversion
  • N-channel
  • Normal level
  • Low on-resistance

Applications

  • Synchronous rectification for AC-DC SMPS
  • Motor control for 48 V–80 V
  • Isolated DC-DC converters
  • Or-ing switches and circuit breakers in 48 V systems
  • Class D audio amplifiers
  • Uninterruptible power supplies (UPS)
Technical specifications
Power loss 57 W
Max. current 21 A
drain-source on resistance RDS (on) max @VGS=10V 52 mΩ
max. operating temperature 150 °C
max. Voltage 150 V
Gate Charge Qg @10V (nC) 8.7x10<sup>-9</sup> C
Assembly SMD
min. operating temperature -55 °C
Enclosure TSDSON-8
Version N channel
Articles of same specification 0
Logistics
Customs tariff number 85412900
Compliance
Date of RoHS guidelines 3/31/15
RoHS conform Yes
SVHC free Yes