Deutsch

BSZ22DN20NS3GATMA1 | Infineon Technologies

Infineon Technologies N channel OptiMOS3 power transistor, 200 V, 7 A, PG-TSDSON-8, BSZ22DN20NS3GATMA1

Order No.: 88S7668
EAN: 4099879035141
MPN:
BSZ22DN20NS3GATMA1
SP000781794
Series: BSZ22D
Infineon Technologies
BSZ22DN20NS3GATMA1 Infineon Technologies MOSFETs
Image may differ
Print
Key Specification:
Version N channel
max. Voltage 200 V
Max. current 7 A
drain-source on resistance RDS (on) max @VGS=10V 225 mΩ
Download Datasheet Technical specifications
Unit Price (€ / pc.)
1.1662 € *
Standard delivery time from the manufacturer is: 1 Week
Total Price:
11.66 € *
*incl. VAT plus shipping costs
Subject to prior sale
10 pcs.
1.1662 €
Description
Technical specifications
Download
Logistics
Compliance

MOSFET, BSZ22DN20NS3GATMA1, Infineon Technologies

Features

  • Optimized for DC/DC conversion
  • N-channel
  • Normal level
  • Low on-resistance

Applications

  • Synchronous rectification for AC-DC SMPS
  • Motor control for 48 V–110 V systems
  • Isolated DC-DC converters
  • Lighting for 110 V AC networks
  • HID lamps
  • Class D audio amplifiers
  • Uninterruptible power supplies (UPS)
  • LED lighting power supply
Technical specifications
Max. current 7 A
Version N channel
Enclosure PG-TSDSON-8
max. Voltage 200 V
max. operating temperature 150 °C
Power loss 34 W
drain-source on resistance RDS (on) max @VGS=10V 225 mΩ
Assembly SMD
Gate Charge Qg @10V (nC) 4.2x10<sup>-9</sup> C
min. operating temperature -55 °C
Articles of same specification 0
Logistics
Original Packaging Reel with 1 piece
Customs tariff number 85412900
Compliance
SVHC free Yes
RoHS conform Yes
Date of RoHS guidelines 3/31/15