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BSS806NEH6327XTSA1 | Infineon Technologies

Infineon Technologies N channel OptiMOS2 small signal transistor, 20 V, 2.3 A, PG-SOT23-3, BSS806NEH6327XTSA1

Order No.: 88S7617
EAN: 4099879035110
MPN:
BSS806NEH6327XTSA1
SP000999336
Series: BSS
Infineon Technologies
BSS806NEH6327XTSA1 Infineon Technologies MOSFETs
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Key Specification:
Version N channel
max. Voltage 20 V
Max. current 2.3 A
drain-source on resistance RDS (on) max @VGS=10V 550 mΩ

Ordering Information:

NCNR product is not cancelable/returnable
Download Datasheet Technical specifications
Unit Price (€ / pc.)
0.1440 € *
Standard delivery time from the manufacturer is: On Request
Total Price:
431.97 € *
*incl. VAT plus shipping costs
Subject to prior sale
3000 pcs.
0.1440 €
Description
Technical specifications
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Logistics

MOSFET, BSS806NEH6327XTSA1, Infineon Technologies

Features

  • N-channel
  • Enhancement mode
  • Ultra logic level
  • Avalanche rated
  • ESD protected

Applications

  • Automotive
  • Consumer
  • DC-DC
  • eMobility
  • Motor control
  • Onboard charger
  • Telecom
Technical specifications
max. Voltage 20 V
Power loss 0.5 W
Assembly SMD
Enclosure PG-SOT23-3
Max. current 2.3 A
Version N channel
min. operating temperature -55 °C
max. operating temperature 150 °C
Gate Charge Qg @10V (nC) 1.7x10<sup>-9</sup> C
drain-source on resistance RDS (on) max @VGS=10V 550 mΩ
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Logistics
Customs tariff number 85412900
Original Packaging Reel with 30,000 pieces