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BSS806NEH6327XTSA1 | Infineon Technologies

Infineon Technologies N channel OptiMOS2 small signal transistor, 20 V, 2.3 A, PG-SOT23-3, BSS806NEH6327XTSA1

Order No.: 88S7617
EAN: 4099879035110
MPN:
BSS806NEH6327XTSA1
SP000999336
Series: BSS
Infineon Technologies
BSS806NEH6327XTSA1 Infineon Technologies MOSFETs
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Key Specification:
Version N-Kanal
max. Voltage 20 V
Max. current 2.3 A
drain-source on resistance RDS (on) max @VGS=10V 550 mΩ

Ordering Information:

NCNR-Produkt ist nicht stornierbar/retournierbar
Download Datasheet Technical specifications
Unit Price (€ / pc.)
0.1440 € *
Available: 0 pcs.
Leadtime: On Request **
Total Price:
431.97 € *
*incl. VAT plus shipping costs
**Subject to prior sale
3000 pcs.
0.1440 €
Description
Technical specifications
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Logistics

MOSFET, BSS806NEH6327XTSA1, Infineon Technologies

Features

  • N-channel
  • Enhancement mode
  • Ultra logic level
  • Avalanche rated
  • ESD protected

Applications

  • Automotive
  • Consumer
  • DC-DC
  • eMobility
  • Motor control
  • Onboard charger
  • Telecom
Technical specifications
Version N-Kanal
drain-source on resistance RDS (on) max @VGS=10V 550 mΩ
Gate Charge Qg @10V (nC) 1.7x10<sup>-9</sup> C
Enclosure PG-SOT23-3
max. Voltage 20 V
Max. current 2.3 A
max. operating temperature 150 °C
min. operating temperature -55 °C
Assembly SMD
Power loss 0.5 W
Articles of same specification 0
Logistics
Customs tariff number 85412900
Original Packaging Rolle mit 30.000 Stück