Deutsch

BSS606NH6327XTSA1 | Infineon Technologies

Infineon Technologies N channel OptiMOS3 small signal transistor, 60 V, 3.2 A, PG-SOT89-4, BSS606NH6327XTSA1

Order No.: 88S7612
EAN: 4099879035103
MPN:
BSS606NH6327XTSA1
SP000691152
Series: BSS
Infineon Technologies
BSS606NH6327XTSA1 Infineon Technologies MOSFETs
Image may differ
Print
Key Specification:
Version N channel
max. Voltage 60 V
Max. current 3.2 A
drain-source on resistance RDS (on) max @VGS=10V 60 mΩ

Ordering Information:

NCNR product is not cancelable/returnable
Download Datasheet Technical specifications
Unit Price (€ / pc.)
0.1273 € *
Standard delivery time from the manufacturer is: 12 Weeks
Total Price:
127.33 € *
*incl. VAT plus shipping costs
Subject to prior sale
1000 pcs.
0.1273 €
Description
Technical specifications
Download
Logistics
Compliance

MOSFET, BSS606NH6327XTSA1, Infineon Technologies

Features

  • N-channel
  • Enhancement mode
  • Logic level
  • Avalanche rated

Applications

  • Automotive
  • Consumer
  • DC-DC
  • eMobility
  • Motor control
  • Onboard charger
  • Telecom
Technical specifications
Power loss 1 W
Max. current 3.2 A
drain-source on resistance RDS (on) max @VGS=10V 60 mΩ
max. operating temperature 150 °C
max. Voltage 60 V
Gate Charge Qg @10V (nC) 3.7x10<sup>-9</sup> C
Assembly SMD
min. operating temperature -55 °C
Enclosure PG-SOT89-4
Version N channel
Articles of same specification 0
Logistics
Original Packaging Reel with 11,000 pieces
Customs tariff number 85412900
Compliance
Date of RoHS guidelines 3/31/15
RoHS conform Yes
SVHC free Yes