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BSS159NH6327XTSA2 | Infineon Technologies

Infineon Technologies N channel SIPMOS small signal transistor, 60 V, 0.13 A, PG-SOT23-3, BSS159NH6327XTSA2

Order No.: 88S7593
EAN: 4099879035066
MPN:
BSS159NH6327XTSA2
SP000919328
Series: BSS
Infineon Technologies
BSS159NH6327XTSA2 Infineon Technologies MOSFETs
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Key Specification:
Version N channel
max. Voltage 60 V
Max. current 0.13 A
drain-source on resistance RDS (on) max @VGS=10V 8 mΩ
Download Datasheet Technical specifications
Unit Price (€ / pc.)
0.1428 € *
Available in 5 Days: 3,000 pcs. - if ordered today
Total Price:
14.28 € *
Price list
Quantity
Price per unit*
100 pcs.
0.1428 €
500 pcs.
0.1249 €
*incl. VAT plus shipping costs
Subject to prior sale
Description
Technical specifications
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Logistics

MOSFET, BSS159NH6327XTSA2, Infineon Technologies

Features

  • N-channel
  • Depletion mode
  • dv/dt rated
  • Lead-free, Halogen-free, Rohs-compliant

Applications

  • Automotive
  • Consumer
  • DC-DC
  • eMobility
  • Motor control
  • Onboard charger
  • Telecom
Technical specifications
drain-source on resistance RDS (on) max @VGS=10V 8 mΩ
max. operating temperature 150 °C
Assembly SMD
Power loss 0.36 W
Enclosure PG-SOT23-3
Version N channel
Gate Charge Qg @10V (nC) 1.4x10<sup>-9</sup> C
Max. current 0.13 A
max. Voltage 60 V
min. operating temperature -55 °C
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Logistics
Original Packaging Reel with 177,000 pieces
Customs tariff number 85412900