BSP88H6327XTSA1 | Infineon Technologies

Name: Infineon Technologies N channel SIPMOS small signal transistor, 240 V, 350 mA, PG-SOT223, BSP88H6327XTSA1
Brand: Infineon Technologies
SKU: 17S7485
Availability: InStock

Infineon Technologies N channel SIPMOS small signal transistor, 240 V, 350 mA, PG-SOT223, BSP88H6327XTSA1

Order No.: 17S7485

EAN: 4099879032867

MPN:

BSP88H6327XTSA1

Series: BSP88

BSP88H6327XTSA1 Infineon Technologies MOSFETs Image 2

Image may differ

Key Specification:

Version N channel

max. Voltage 240 V

Max. current 350 mA

drain-source on resistance RDS (on) max @VGS=4,5V 7.5 Ω

drain-source on resistance RDS (on) max @VGS=10V 6 Ω

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.3332 € *

Standard delivery time from the manufacturer is: 10 Weeks

Total Price:

333.20 € *

*incl. VAT plus shipping costs

Subject to prior sale

Description

MOSFET, BSP88H6327XTSA1, Infineon Technologies

Features

N-channel
Enhancement mode
Logic level
Avalanche rated
dv/dt rated

Applications

Automotive
Consumer
DC-DC
eMobility
Motor control
Onboard charger
Telecom

Technical specifications

Filter	Property	Value
	drain-source on resistance RDS (on) max @VGS=4,5V	7.5 Ω
	Power loss	1.8 W
	Max. current	350 mA
	drain-source on resistance RDS (on) max @VGS=10V	6 Ω
	max. operating temperature	150 °C
	max. Voltage	240 V
	Gate Charge Qg @10V (nC)	6.8x10<sup>-9</sup> C
	Assembly	SMD
	min. operating temperature	-55 °C
	Enclosure	PG-SOT223
	Version	N channel