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BSP372NH6327XTSA1 | Infineon Technologies

Infineon Technologies N channel SIPMOS small signal transistor, 100 V, 1.8 A, SOT-223, BSP372NH6327XTSA1

Order No.: 17S7642
EAN: 4099879032935
MPN:
BSP372NH6327XTSA1
Series: BSP37
Infineon Technologies
BSP372NH6327XTSA1 Infineon Technologies MOSFETs Image 1
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Key Specification:
Version N channel
max. Voltage 100 V
Max. current 1.8 A
drain-source on resistance RDS (on) max @VGS=10V 230 mΩ
Download Datasheet Technical specifications
Unit Price (€ / pc.)
0.4165 € *
Available: 0 pcs.
Leadtime: On Request **
Total Price:
416.50 € *
*incl. VAT plus shipping costs
**Subject to prior sale
1000 pcs.
0.4165 €
Description
Technical specifications
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Logistics
Compliance

MOSFET, BSP372NH6327XTSA1, Infineon Technologies

Features

  • N-channel
  • Enhancement mode
  • Logic level
  • Avalanche rated

Applications

  • Automotive
  • Consumer
  • DC-DC
  • eMobility
  • Motor control
  • Onboard charger
  • Telecom
Technical specifications
max. Voltage 100 V
Power loss 1.8 W
Assembly SMD
Enclosure SOT-223
Max. current 1.8 A
Version N channel
min. operating temperature -55 °C
max. operating temperature 150 °C
Gate Charge Qg @10V (nC) 9.5x10<sup>-9</sup> C
drain-source on resistance RDS (on) max @VGS=10V 230 mΩ
Articles of same specification 0
Logistics
Country of origin MY
Customs tariff number 85412900
Original Packaging Reel with 1 piece
Compliance
Date of RoHS guidelines 3/31/15
SVHC free Yes
RoHS conform Yes