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BSP322PH6327XTSA1 | Infineon Technologies

Infineon Technologies P-channel SIPMOS small signal transistor, -100 V, -1 A, PG-SOT223-4, BSP322PH6327XTSA1

Order No.: 88S7539
EAN: 4099879035011
MPN:
BSP322PH6327XTSA1
SP001058784
Series: BSP
Infineon Technologies
BSP322PH6327XTSA1 Infineon Technologies MOSFETs
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Key Specification:
Version P-channel
max. Voltage -100 V
Max. current -1 A
drain-source on resistance RDS (on) max @VGS=10V 800 mΩ

Ordering Information:

NCNR product is not cancelable/returnable
Download Datasheet Technical specifications
Unit Price (€ / pc.)
0.2118 € *
Standard delivery time from the manufacturer is: 10 Weeks
Total Price:
211.82 € *
*incl. VAT plus shipping costs
Subject to prior sale
1000 pcs.
0.2118 €
Description
Technical specifications
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Logistics
Compliance

MOSFET, BSP322PH6327XTSA1, Infineon Technologies

Features

  • P-Channel
  • Enhancement mode
  • Logic level
  • Avalanche rated

Applications

  • Power management functions
  • Motor control
  • On-board charger
  • DC-DC
  • Consumer
  • Logic level translators
  • Power MOSFET gate drivers
Technical specifications
max. Voltage -100 V
drain-source on resistance RDS (on) max @VGS=10V 800 mΩ
max. operating temperature 150 °C
min. operating temperature -55 °C
Gate Charge Qg @10V (nC) 1.24x10<sup>-8</sup> C
Max. current -1 A
Enclosure PG-SOT223-4
Assembly SMD
Power loss 1.8 W
Version P-channel
Articles of same specification 0
Logistics
Original Packaging Reel with 6,000 pieces
Customs tariff number 85412900
Compliance
Date of RoHS guidelines 3/31/15
RoHS conform Yes
SVHC free Yes