BSP135 H6327 | Infineon Technologies

Infineon Technologies N channel SIPMOS small signal transistor, PG-SOT223, BSP135 H6327

Order No.: 54S1047
MPN:
BSP135 H6327
SP001058812
BSP135 H6327 Infineon Technologies MOSFETs
Image may differ
Unit Price (€ / pc.)
0.9401 € *
Standard delivery time from the manufacturer is: 42 Weeks
Total Price:
940.10 € *
*incl. VAT plus shipping costs
Subject to prior sale
1000 pcs.
0.9401 €

Signal transistor, BSP135 H6327, INFINEON

Areas of application include power supply startup power, over-voltage protection, in-rush-current limiter, off-line voltage reference. With one single component it is possible to realize a simple current regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFET is available with V GS(th) indicator on the reel.

Features

  • N-channel
  • Depletion mode
  • Dynamic dv/dt rating
  • Pb-free lead plating; RoHS compliant
  • Halogen-free

Applications

  • Automotive
  • Consumer
  • DC-DC
  • eMobility
  • Onboard charger
Technical specifications
Filter Property Value
Assembly SMD
drain-source on resistance RDS (on) max @VGS=10V 20 mΩ
Version N channel
max. operating temperature 150 °C
Enclosure PG-SOT223
min. operating temperature -55 °C
Logistics
Property Value
Country of origin CN
Original Packaging Reel with 1,000 pieces
Compliance
Property Value
Date of RoHS guidelines 3/31/15
SVHC free Yes
RoHS conform Yes