BSC018N04LSGATMA1 | Infineon Technologies
Infineon Technologies N channel OptiMOS3 power transistor, 40 V, 30 A, PG-TDSON-8, BSC018N04LSGATMA1
Unit Price (€ / pc.)
0.833 € *
Available: 0 pcs.
Leadtime: On Request **
MOSFET, BSC018N04LSGATMA1, Infineon Technologies
Features
- Fast switching MOSFET for SMPS
- Optimized technology for DC/DC converters
- N-channel
- Very low on-resistance
Applications
- Synchronous rectification
- Isolated DC-DC converters
- Motor control
- Or-ing switches
Technical specifications
| Version | N-Kanal | |
| drain-source on resistance RDS (on) max @VGS=10V | 1.8 mΩ | |
| Gate Charge Qg @10V (nC) | 5.4x10<sup>-8</sup> C | |
| Enclosure | PG-TDSON-8 | |
| max. Voltage | 40 V | |
| Max. current | 30 A | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| Power loss | 125 W |
Download
Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Rolle mit 1 Stück |