IKW30N60T | Infineon Technologies

Transistor, IKW30N60T, Infineon Technologies

Hard-switching 600 V, 30 A TRENCHSTOP IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Features

• Lowest VCEsat drop for lower conduction losses
• Low switching losses
• Easy parallel switching capability due to positive temperature coefficient in VCEsat
• Very soft, fast recovery anti-parallel Emitter Controlled Diode
• High ruggedness, temperature stable behavior
• Low EMI emissions
• Low gate charge
• Very tight parameter distribution

Applications

• General purpose motor drive - variating frequency and voltage
• Home appliances
• Offline UPS - high frequency transformers
• Telecommunication infrastructure
• High ruggedness, temperature stable behavior
• Low EMI emissions
• Low gate charge
• Very tight parameter distribution