SMBT3904E6327 | Infineon Technologies
Bipolar junction transistor, NPN, 200 mA, 40 V, SMD, SOT-23, SMBT3904E6327
Discontinued
Unit Price (€ / pc.)
0.0476 € *
Available: 9 pcs.
Total Price:
0.05 € *
Price list
Quantity
Price per unit*
1 pcs.
0.0476 €
10 pcs.
0.0417 €
100 pcs.
0.0333 €
500 pcs.
0.0274 €
2500 pcs.
0.0238 €
10000 pcs.
0.0214 €
20000 pcs.
0.0190 €
*incl. VAT plus shipping costs
Subject to prior sale
Bipolar transistor, SMBT3904E6327, Infineon Technologies
Features
- Low current gain
- Low collector-emitter saturation voltage
- Pb-free and RoHs-compliant
Technical specifications
| Version | NPN | |
| max. operating temperature | 150 °C | |
| Power dissipation | 0.33 W | |
| Transit frequency fTmin | 300 MHz | |
| Enclosure | SOT-23 | |
| max.voltage between collector and base Vcbo | 60 V | |
| Rated current | 200 mA | |
| min. operating temperature | -65 °C | |
| Assembly | SMD | |
| max.voltage between collector and emitter Vceo | 40 V | |
| Min DC gain | 100 mA | |
| Saturation voltage | 300 mV | |
| Max DC amplification | 300 mA | |
| Collector current | 200 mA |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |