BSP60H6327XTSA1 | Infineon Technologies
Bipolar junction transistor, PNP, 1 A, 45 V, SMD, SOT-223, BSP60H6327XTSA1
Unit Price (€ / pc.)
0.2083 € *
Standard delivery time from the manufacturer is: On Request
Total Price:
20.83 € *
Price list
Quantity
Price per unit*
100 pcs.
0.2083 €
500 pcs.
0.1821 €
*incl. VAT plus shipping costs
Subject to prior sale
Bipolar transistor, BSP60H6327XTSA1, Infineon Technologies
Features
- High collector current
- High current gain
- Low collector-emitter saturation voltage
- Pb-free and RoHs-compliant
Technical specifications
| Saturation voltage | 1.8 V | |
| Rated current | 1 A | |
| Transit frequency fTmin | 200 MHz | |
| Collector current | 1 A | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and emitter Vceo | 45 V | |
| Assembly | SMD | |
| Enclosure | SOT-223 | |
| Power dissipation | 1.5 W | |
| Version | PNP | |
| max.voltage between collector and base Vcbo | 60 V | |
| min. operating temperature | -65 °C | |
| Min DC gain | 2000 mA |
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Logistics
| Country of origin | US |
| Customs tariff number | 85412900 |
Compliance
| Date of RoHS guidelines | 3/31/15 |
| RoHS conform | Yes |
| SVHC free | Yes |