BFR35APE6327HTSA1 | Infineon Technologies

Bipolar junction transistor, NPN, 45 mA, 15 V, SMD, SOT-23, BFR35APE6327HTSA1

Order No.: 88S7146
EAN: 4099879031822
MPN:
BFR35APE6327HTSA1
SP000011060
Series: BFR
BFR35APE6327HTSA1 Infineon Technologies Bipolar Transistors
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Unit Price (€ / pc.)
0.2392 € *
Available: 0 pcs.
Leadtime: On Request **
Total Price:
717.57 € *
*incl. VAT plus shipping costs
**Subject to prior sale
3000 pcs.
0.2392 €

Bipolar transistor, BFR35APE6327HTSA1, Infineon Technologies

Features

  • Low current gain
  • High collector-emitter breakdown voltage
  • Low noise
  • Pb-free and RoHs-compliant

Applications

  • For low distortion broadband amplifiers
  • For oscilators
Technical specifications
Max DC amplification 140 mA
Assembly SMD
Enclosure SOT-23
max.voltage between collector and base Vcbo 20 V
Version NPN
min. operating temperature -55 °C
Transit frequency fTmin 5 GHz
Min DC gain 70 mA
max. operating temperature 150 °C
max.voltage between collector and emitter Vceo 15 V
Collector current 45 mA
Power dissipation 0.28 W
Logistics
Customs tariff number 85412900
Original Packaging Reel with 6,000 pieces
Compliance
Date of RoHS guidelines 3/31/15
SVHC free Yes
RoHS conform Yes