BFR340FH6327XTSA1 | Infineon Technologies
Bipolar junction transistor, NPN, 20 mA, 6 V, SMD, TSFP-3, BFR340FH6327XTSA1
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Bipolar transistor, BFR340FH6327XTSA1, Infineon Technologies
Features
- Low current gain
- High breakdown voltage enables operation in automotive applications
- Low noise
- Pb-free and RoHs-compliant
Applications
- For general purpose low noise amplifier
- Ideal for low current operation
Technical specifications
| Version | NPN | |
| Enclosure | TSFP-3 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 15 V | |
| max.voltage between collector and emitter Vceo | 6 V | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| Transit frequency fTmin | 11 GHz | |
| Power dissipation | 0.075 W | |
| Collector current | 20 mA | |
| Max DC amplification | 160 mA | |
| Min DC gain | 90 mA |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Rolle mit 60.000 Stück |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |