BFR193E6327 | Infineon Technologies
Bipolar junction transistor, NPN, 12 V, SMD, SOT-23, BFR193E6327
Order No.: 16S9830
MPN:
BFR193E6327
Unit Price (€ / pc.)
0.1547 € *
Standard delivery time from the manufacturer is: 1 Week
For low noise, high-gain amplifiers up to 2 GHz
Technical specifications
| Filter | Property | Value |
|---|---|---|
| Power dissipation | 580 mW | |
| Version | NPN | |
| max. operating temperature | 150 °C | |
| Transit frequency fTmin | 6 GHz | |
| max.voltage between collector and emitter Vceo | 12 V | |
| Enclosure | SOT-23 | |
| Assembly | SMD | |
| max.voltage between collector and base Vcbo | 20 V |
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Logistics
| Property | Value |
|---|---|
| Customs tariff number | 85412900 |
| Country of origin | MY |
Compliance
| Property | Value |
|---|---|
| Date of RoHS guidelines | 6/8/11 |
| RoHS conform | Yes |
| SVHC free | Yes |