BFP842ESDH6327XTSA1 | Infineon Technologies
Bipolar junction transistor, NPN, 40 mA, 3.25 V, SMD, SOT-343, BFP842ESDH6327XTSA1
Unit Price (€ / pc.)
0.3332 € *
Available: 0 pcs.
Leadtime: On Request **
Bipolar transistor, BFP842ESDH6327XTSA1, Infineon Technologies
The BFP842ESDH6327XTSA1 is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications.
Features
- Unique combination of high end RF performance and robustness
- Integrated protection circuits
- High RF gain
- High transition frequency
Applications
- Wireless communications: WLAN, WiMAX and Bluetooth
- Satellite communication systems: GNSS navigation systems, satellite radio and C-band LNB
- Multimedia applications such as mobile/portable TV, mobile TV and FM radio
- ISM applications like RKE, AMR and Zigbee
Technical specifications
| Max DC amplification | 450 mA | |
| Assembly | SMD | |
| Enclosure | SOT-343 | |
| max.voltage between collector and base Vcbo | 4.1 V | |
| Version | NPN | |
| min. operating temperature | -55 °C | |
| Transit frequency fTmin | 57 GHz | |
| Min DC gain | 150 mA | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and emitter Vceo | 3.25 V | |
| Collector current | 40 mA | |
| Power dissipation | 0.12 W |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 3,000 pieces |
Compliance
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
| RoHS conform | Yes |